Title :
Dual-wavelength (GaAl)As laser
Author :
Bouadma, N. ; Bouley, J.C. ; Riou, J.
Author_Institution :
Centre National d´Etudes des Télécommunications, Bagneux, France
Abstract :
A monolithic structure integrating two stripe-geometry (GaAl)As lasers emitting at 8500 and 8850 Å is described. The threshold currents for both lasers are in the 50¿70 mA range. The spacing between the stripes for the device reported here is 25 ¿m; it can be reduced to 10 ¿m in order to optimise the direct coupling to a 50 ¿m diameter fibre.
Keywords :
III-V semiconductors; gallium arsenide; optical communication equipment; semiconductor junction lasers; 8500 and 8850 Angstrom wavelengths; dual wavelength laser; integrating two stripe-geometry (GaAl)As lasers; monolithic structure; optical fibre communication lasers; spacing between lasers 25 micron; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820591
