Title :
GaSb-based monolithic EP-VCSEL emitting above 2.5 μm
Author :
Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, Frederic
Author_Institution :
Inst. Electron. du Sud, Univ. Montpellier, Montpellier
Abstract :
The first electrically-pumped GaSb-based vertical cavity surface emitting lasers emitting above 2.5 mum at room temperature are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. Devices with a diameter of 30 mum operate in quasi-CW (1 mus, 5) at 2.52 mum above 300 K. A minimum threshold current of 4.7 kA/cm2 in pulsed operation (100 ns, 0.5) was obtained at 251 K with these devices.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; DBR laser; GaInAsSb-AlGaAsSb; electrically-pumped laser; monolithic EP-VCSEL; monolithic all-epitaxial structure; multiquantum-well active region; size 30 mum; temperature 251 K; time 100 ns; vertical cavity surface emitting lasers; wavelength 2.52 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082845
