• DocumentCode
    980959
  • Title

    Current/frequency-modulation characteristics for directly optical frequency-modulated injection lasers at 830 nm and 1.3 ¿m

  • Author

    Jacobsen, G. ; Olesen, Henning ; Birkedahl, F. ; Tromborg, Bjarne

  • Author_Institution
    Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    874
  • Lastpage
    876
  • Abstract
    The modulus and phase of the current/frequency-modulation transfer function for a 1.3 ¿m GaInAsP/InP BH laser have been measured in the frequency range from 1 kHz to 500 MHz. Using a Hilbert transformation it is demonstrated how the phase delay can be determined from the modulus for two different lasers, the 1.3 ¿m BH laser and an 830 nm CSP laser.
  • Keywords
    III-V semiconductors; frequency modulation; gallium arsenide; optical modulation; semiconductor junction lasers; 1.3 micron BH laser; 830 nm CSP laser; GaInAsP/InP BH laser; Hilbert transformation; current/frequency-modulation transfer function; directly modulated lasers; frequency range from 1 kHz to 500 MHz; frequency-modulation characteristics; modulus; optical frequency modulation; phase delay;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820593
  • Filename
    4246928