DocumentCode :
980959
Title :
Current/frequency-modulation characteristics for directly optical frequency-modulated injection lasers at 830 nm and 1.3 ¿m
Author :
Jacobsen, G. ; Olesen, Henning ; Birkedahl, F. ; Tromborg, Bjarne
Author_Institution :
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
Volume :
18
Issue :
20
fYear :
1982
Firstpage :
874
Lastpage :
876
Abstract :
The modulus and phase of the current/frequency-modulation transfer function for a 1.3 ¿m GaInAsP/InP BH laser have been measured in the frequency range from 1 kHz to 500 MHz. Using a Hilbert transformation it is demonstrated how the phase delay can be determined from the modulus for two different lasers, the 1.3 ¿m BH laser and an 830 nm CSP laser.
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; optical modulation; semiconductor junction lasers; 1.3 micron BH laser; 830 nm CSP laser; GaInAsP/InP BH laser; Hilbert transformation; current/frequency-modulation transfer function; directly modulated lasers; frequency range from 1 kHz to 500 MHz; frequency-modulation characteristics; modulus; optical frequency modulation; phase delay;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820593
Filename :
4246928
Link To Document :
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