Title :
Lower submicron pattern definition by high-voltage electron-beam lithography
Author :
Yoshimi, Masato ; Kawabuchi, K. ; Takigawa, T. ; Takahashi, Masaharu ; Kato, Yu
Author_Institution :
Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Abstract :
High-voltage electron-beam writing on polymethyl methacrylate (PMMA) at 50 kV with a dose of 50 ¿C/cm2 has been found to give an outstanding result of the simultaneous formation of isolated and arrayed quarter-micron window patterns of the same size as the electron-beam diameter of a quarter micron.
Keywords :
electron beam lithography; 250 nm patterns; PMMA; arrayed quarter-micron window patterns; dose 50 microC/cm2; electron beam voltage 50 kV; high-voltage electron-beam lithography; polymethyl methyacrylate; simultaneous formation; submicron lithography; submicron pattern definition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820597
