• DocumentCode
    981057
  • Title

    Rectifying GaAs-GaAlAs-GaAs structures by MOCVD compositional grading

  • Author

    Escobosa, A. ; Kr¿¿utle, H. ; Beneking, H.

  • Author_Institution
    Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    888
  • Lastpage
    889
  • Abstract
    Several graded bandgap structures have been fabricated by metalorganic vapour deposition using the GaAs-Ga1¿xAlxAs-GaAs system with constant n-type doping and x varying with position. The I/V characteristics show the expected nonsymmetrical and nonlinear behaviour.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs-Ga1-xAlxAs-GaAs system; I/V characteristics; MOCVD compositional grading; graded bandgap structures; metalorganic chemical vapour deposition; nonlinear behaviour; nonsymmetrical behaviour; p-n heterojunctions; rectifying structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820602
  • Filename
    4246937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981057