InGaAsP/InP (1.3 ¿m) buried-crescent lasers with separate optical confinement

We report that a significant improvement in the performance of InGaAsP (¿=1.3 ¿m) crescent lasers is obtained by introducing InGaAsP (¿=1.1 ¿m) cladding layers on both sides of the active layer. Such lasers grown with good reproducibility and high yield have 20¿35 mA threshold currents, pulsed power outputs of up to 50 mW, with excellent output linearity, and external quantum efficiencies of 50¿60%. Operation up to 90°C with 4 mW output power has been observed. Short current pulse excitation shows that these lasers are suitable for gigabit/s operation.