Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect

Author

Borchert, Bernd ; Dorda, Gerhard E.

Author_Institution

Siemens AG, Munich, West Germany

Volume

35

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

483

Lastpage

488

Abstract

The piezoresistance effect of n-inversion layers in the hot-electron regime is discussed. The measurements were performed on short-channel n-MOSFETs at both 77 and 300 K. From the data at 77 K, clear evidence is obtained for different saturation velocities of electrons in Si depending on the occupation of the subbands. By application of this effect to 300 K, good agreement between theory and experiment is achieved. Furthermore, the mechanical prestress inside the transistor has been estimated to reach values of up to 150 N-mm^-2

Keywords

elemental semiconductors; hot carriers; insulated gate field effect transistors; piezoresistance; semiconductor device models; silicon; 300 K; 77 K; Si; hot electron effects; mechanical prestress; n-inversion layers; occupation of subbands; piezoresistance effect; saturation velocities of electrons; short-channel n-MOSFETs; stress 150 N/mm²; CMOS process; CMOS technology; Electron mobility; MOSFET circuits; Occupational stress; Performance evaluation; Piezoresistance; Temperature; Velocity measurement; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2482

Filename

2482