DocumentCode
981123
Title
Dependence of process parameters on planarization isolation and etching of sloped vias in polyimides for GaAs ICs
Author
Singh, J.K. ; Roybardhan, A. ; Kothari, H.S. ; Singh, B.R. ; Khokle, W.S.
Author_Institution
Central Electronics Engineering Research Institute, Rajasthan, India
Volume
75
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
850
Lastpage
852
Abstract
The effect of imidization condition for realizing sloped vias in polyimide film using positive resist as an etch mask has been investigated. Using chemical etching techniques, vias of tapered angles ranging from 45° to 60° has been obtained for 80-percent imidization of the polyimide film. Results on optimum process conditions for obtaining dielectric breakdown strength of 2MV/cm and degree of planarization of about 58 percent have also been included.
Keywords
Chemicals; Coatings; Dielectric breakdown; Dielectric materials; Dielectrics and electrical insulation; Etching; Gallium arsenide; Planarization; Polyimides; Resists;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1987.13810
Filename
1458077
Link To Document