The effect of an SiO/sub 2/ buffer layer on the SAW properties of ZnO/SiO/sub 2//GaAs structure

Author

Shih, Wen-Ching ; Wu, Mu-Shiang ; Shimizu, Masaru ; Shoisaki, T.

Author_Institution

Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei, Taiwan

Volume

40

Issue

6

fYear

1993

Firstpage

642

Lastpage

647

Abstract

The effect of an SiO/sub 2/ buffer layer on the surface acoustic wave (SAW) properties of ZnO/SiO/sub 2//GaAs structure is examined. Both theoretical and experimental results show that the coupling coefficient is increased appreciably by providing an SiO/sub 2/ film between the ZnO film and the GaAs substrate. Adding an SiO/sub 2/ film is also beneficial to the promotion of quality of ZnO thin film. The results could be useful for the further development of monolithic SAW devices.<>

Keywords

II-VI semiconductors; gallium arsenide; semiconductor-insulator-semiconductor structures; silicon compounds; surface acoustic wave devices; surface acoustic waves; zinc compounds; GaAs substrate; SAW properties; SiO/sub 2/ buffer layer effects; ZnO-SiO/sub 2/-GaAs structure; coupling coefficient; monolithic SAW devices; semiconductors; surface acoustic wave; Acoustic waves; Buffer layers; Gallium arsenide; Piezoelectric devices; Piezoelectric films; Substrates; Surface acoustic wave devices; Surface acoustic waves; Tensile stress; Zinc oxide;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.248206

Filename

248206