Title :
Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasers
Author :
Ebeling, K.J. ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A.
Author_Institution :
Bell Telephone Laboratories, Holmdel, USA
Abstract :
The spectral behaviour of monolithic two-section GaInAsP/InP lasers is studied. Single-longitudinal-mode light pulses of less than 750 ps length are produced by driving the long section of the laser only or by prebiasing the long cavity and modulating the short section with a current pulse of 1 ns halfwidth. The wavelength of the output light can be changed by varying the operation temperature or the prebias level.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; high-speed current modulation; monolithic two-section GaInAsP/InP lasers; semiconductor lasers; single-longitudinal-mode subnanosecond light pulses; spectral behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820614
