• DocumentCode
    981177
  • Title

    Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasers

  • Author

    Ebeling, K.J. ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A.

  • Author_Institution
    Bell Telephone Laboratories, Holmdel, USA
  • Volume
    18
  • Issue
    21
  • fYear
    1982
  • Firstpage
    901
  • Lastpage
    902
  • Abstract
    The spectral behaviour of monolithic two-section GaInAsP/InP lasers is studied. Single-longitudinal-mode light pulses of less than 750 ps length are produced by driving the long section of the laser only or by prebiasing the long cavity and modulating the short section with a current pulse of 1 ns halfwidth. The wavelength of the output light can be changed by varying the operation temperature or the prebias level.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; high-speed current modulation; monolithic two-section GaInAsP/InP lasers; semiconductor lasers; single-longitudinal-mode subnanosecond light pulses; spectral behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820614
  • Filename
    4246952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981177