• DocumentCode
    981284
  • Title

    Influence of pressure on temperature sensitivity of GaxIn1¿xAsyP1¿y lasers

  • Author

    Adams, A.R. ; Patel, Dinesh ; Greene, P.D. ; Henshall, G.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    18
  • Issue
    21
  • fYear
    1982
  • Firstpage
    919
  • Lastpage
    920
  • Abstract
    At high temperatures the threshold current of GaxIn1¿xAsyP1¿y stripe lasers shows a more marked decrease with pressure than at room temperature. The temperature sensitivity term T0 increases from about 65 K at atmospheric pressure to about 115 K at 7 kbar. The results can be best interpreted in terms of intervalence band absorption.
  • Keywords
    III-V semiconductors; gallium arsenide; high-pressure effects in solids; indium compounds; semiconductor junction lasers; GaxIn1-xAsyP1-y lasers; intervalence band absorption; pressure effects; semiconductor laser; stripe lasers; temperature sensitivity; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820626
  • Filename
    4246966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981284