Title :
Influence of pressure on temperature sensitivity of GaxIn1¿xAsyP1¿y lasers
Author :
Adams, A.R. ; Patel, Dinesh ; Greene, P.D. ; Henshall, G.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
At high temperatures the threshold current of GaxIn1¿xAsyP1¿y stripe lasers shows a more marked decrease with pressure than at room temperature. The temperature sensitivity term T0 increases from about 65 K at atmospheric pressure to about 115 K at 7 kbar. The results can be best interpreted in terms of intervalence band absorption.
Keywords :
III-V semiconductors; gallium arsenide; high-pressure effects in solids; indium compounds; semiconductor junction lasers; GaxIn1-xAsyP1-y lasers; intervalence band absorption; pressure effects; semiconductor laser; stripe lasers; temperature sensitivity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820626
