DocumentCode :
981390
Title :
Dependence of SAW resonator 1/f noise on device size
Author :
Parker, Thomas E.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Volume :
40
Issue :
6
fYear :
1993
Firstpage :
831
Lastpage :
833
Abstract :
Experiments were conducted with eight 450-MHz surface acoustic wave (SAW) resonators which demonstrate that a resonator´s 1/f noise depends approximately inversely on the active acoustic area of the device. This observation is consistent with a proposed theory that 1/f noise in acoustic resonators is caused by localized velocity or dimensional fluctuations.<>
Keywords :
acoustic resonators; crystal resonators; electron device noise; random noise; surface acoustic wave devices; 450 MHz; SAW resonator 1/f noise; device size; dimensional fluctuations; localized velocity; surface acoustic wave resonators; 1f noise; Acoustic devices; Acoustic measurements; Acoustic noise; Acoustic transducers; Acoustic waves; Fluctuations; Frequency; Surface acoustic wave devices; Surface acoustic waves;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/58.248231
Filename :
248231
Link To Document :
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