• DocumentCode
    981446
  • Title

    New explanation of ND¿1 dependence of specific contact resistance for n-GaAs

  • Author

    Dingfen, Wu ; Heime, K.

  • Author_Institution
    University of Duisburg, Solid-State Electronics Department, Duisburg, West Germany
  • Volume
    18
  • Issue
    22
  • fYear
    1982
  • Firstpage
    940
  • Lastpage
    941
  • Abstract
    A new model of the ohmic contact to n-GaAs is proposed. It assumes that the contact resistance is due to the n+/n-barrier between the contact region (n+) and the semiconductor bulk (n = ND) as long as the bulk concentration is smaller than the effective density of states. Then the contact resistance is inversely proportional to the dopant concentration.
  • Keywords
    III-V semiconductors; contact resistance; electronic density of states; gallium arsenide; ohmic contacts; ND-1 dependence; bulk concentration; carrier concentration; dopant concentration; effective density of states; model; n+/n-barrier; n-GaAs; ohmic contact; semiconductor; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820645
  • Filename
    4246992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981446