DocumentCode
981549
Title
Thin-Film Cryotrons: Part II-Cryotron Characteristics and Circuit Applications
Author
Slade, A.E.
Volume
48
Issue
9
fYear
1960
Firstpage
1569
Lastpage
1576
Abstract
Part II describes the characteristics of the thin-film cryotron. The superconducting to normal transition in a tin gate 0.125 inch wide and 3 à 10-5 cm thick is controlled by current in a single lead control, 0.006 inch wide, which crosses the gate. Silicon monoxide is used for insulation. The switching time of a cryotron circuit is dependent upon the inductance and resistance of the circuit. Therefore, it is important to reduce the inductance by using a superconductive ground plane and by reducing the length of all interconnecting leads. Nonlocking flip-flops have been constructed, and a ring of five flip-flops have operated with a delay per stage of ¿ ¿sec.
Keywords
Flip-flops; Inductance; Insulation; Silicon; Superconducting thin films; Superconductivity; Switching circuits; Thickness control; Thin film circuits; Tin;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1960.287670
Filename
4066216
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