• DocumentCode
    981549
  • Title

    Thin-Film Cryotrons: Part II-Cryotron Characteristics and Circuit Applications

  • Author

    Slade, A.E.

  • Volume
    48
  • Issue
    9
  • fYear
    1960
  • Firstpage
    1569
  • Lastpage
    1576
  • Abstract
    Part II describes the characteristics of the thin-film cryotron. The superconducting to normal transition in a tin gate 0.125 inch wide and 3 × 10-5 cm thick is controlled by current in a single lead control, 0.006 inch wide, which crosses the gate. Silicon monoxide is used for insulation. The switching time of a cryotron circuit is dependent upon the inductance and resistance of the circuit. Therefore, it is important to reduce the inductance by using a superconductive ground plane and by reducing the length of all interconnecting leads. Nonlocking flip-flops have been constructed, and a ring of five flip-flops have operated with a delay per stage of ¿ ¿sec.
  • Keywords
    Flip-flops; Inductance; Insulation; Silicon; Superconducting thin films; Superconductivity; Switching circuits; Thickness control; Thin film circuits; Tin;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1960.287670
  • Filename
    4066216