• DocumentCode
    981582
  • Title

    Double-channel planar buried-heterostructure laser diode with effective current confinement

  • Author

    Mito, I. ; Kitamura, Masayuki ; Kobayashi, Ke. ; Kobayashi, Ko.

  • Author_Institution
    Nippon Electric Co. Ltd., Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    18
  • Issue
    22
  • fYear
    1982
  • Firstpage
    953
  • Lastpage
    954
  • Abstract
    An InGaAsP double-channel planar buried-heterostructure laser diode has been developed in which a p-n-p-n current confinement structure effectively reduces the leakage current. High-power operation over 50 mW and high-temperature operation up to 130°C have been attained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron wavelength; BH laser diode; InGaAsP laser diode; buried-heterostructure laser diode; double channel planar laser diode; effective current confinement; high power operation; high-temperature operation; leakage current; optical communication; p-n-p-n current confinement structure; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820655
  • Filename
    4247002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981582