DocumentCode
981728
Title
Small-reflection operation of substrate-edge excited optoelectronic microstrip transmission-type switches
Author
Platte, W.
Author_Institution
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Volume
18
Issue
22
fYear
1982
Firstpage
977
Lastpage
978
Abstract
A new type of substrate-edge excited GaAs microstrip switch for high-speed optoelectronic microwave switching is reported. The specific method of laser excitation, along with an appropriate microstrip structure, allows the device to be operated as a transmission-type switch exhibiting small input reflection coefficient and high optoelectronic efficiency.
Keywords
III-V semiconductors; gallium arsenide; photoconducting devices; semiconductor switches; strip line components; GaAs microstrip switch; high-speed optoelectronic microwave switching; laser excitation; photoconductivity; small reflection operation; substrate edge excited switch; transmission-type switches;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820670
Filename
4247019
Link To Document