Title :
Small-reflection operation of substrate-edge excited optoelectronic microstrip transmission-type switches
Author_Institution :
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Abstract :
A new type of substrate-edge excited GaAs microstrip switch for high-speed optoelectronic microwave switching is reported. The specific method of laser excitation, along with an appropriate microstrip structure, allows the device to be operated as a transmission-type switch exhibiting small input reflection coefficient and high optoelectronic efficiency.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting devices; semiconductor switches; strip line components; GaAs microstrip switch; high-speed optoelectronic microwave switching; laser excitation; photoconductivity; small reflection operation; substrate edge excited switch; transmission-type switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820670
