Title :
A 1–3-GHz Digitally Controlled Dual-RF Input Power-Amplifier Design Based on a Doherty-Outphasing Continuum Analysis
Author :
Andersson, Christer M. ; Gustafsson, David ; Chani Cahuana, Jessica ; Hellberg, Richard ; Fager, Christian
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
This paper presents a linear multi-harmonic analysis method to evaluate the performance of digitally controlled dual RF-input power amplifiers (PAs). The method enables, due to its low computational cost, optimization of PA efficiency and bandwidth in a complex design space involving two independent inputs. Under the idealized assumption of short-circuited higher harmonics, the analysis is used to prove the existence of a Doherty-outphasing continuum, featuring high average efficiency over 100% fractional bandwidth. With this result as a foundation, a combiner incorporating microwave transistor parasitics is analyzed without assuming short-circuited higher harmonics, showing that high average efficiencies are also achievable under more realistic conditions. A PA is straightforwardly designed from these calculation results using two 15-W GaN HEMTs. The simulated layout-ready (large-signal transistor model) PA average drain efficiency exceeds 50% over 1.1-3.7 GHz for a 6.7-dB peak-to-average power-ratio WCDMA signal. The measured PA has a maximum output power of 44 ±0.9 dBm and a 6-dB output power back-off (OPBO) power-added efficiency (PAE) of 45% over 1-3 GHz. After applying digital pre-distortion, excellent linearity is demonstrated when transmitting the WCDMA signal, resulting in an adjacent channel leakage power ratio lower than -57 dBc with corresponding average PAE of 50% and 40% at 1.2 and 2.3 GHz, respectively. This is, to the authors´ knowledge, the most wideband OPBO efficiency enhanced PA reported to date, proving the effectiveness of employing linear multi-harmonic analysis in dual-input PA design.
Keywords :
III-V semiconductors; digital control; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave transistors; wide band gap semiconductors; Doherty-outphasing continuum analysis; GaN; HEMT; OPBO efficiency; PA bandwidth; PA efficiency; PAE; digital predistortion; digitally controlled dual-RF input power-amplifier design; efficiency 40 percent; efficiency 45 percent; efficiency 50 percent; frequency 1 GHz to 3 GHz; linear multiharmonic analysis; microwave transistor parasitics; output power back-off; peak-to-average power-ratio WCDMA signal; power 15 W; power-added efficiency; simulated layout-ready PA; Bandwidth; Current control; Harmonic analysis; Peak to average power ratio; Power generation; Topology; Transistors; Chireix; Doherty; energy efficiency; gallium–nitride (GaN); outphasing; power amplifiers (PAs);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2280562