DocumentCode :
981983
Title :
780 nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells
Author :
Shin, Jae-Hwan ; Kim, T. ; Lee, E.-K. ; Kim, Inna ; Lee, Young-Hyun
Volume :
32
Issue :
14
fYear :
1996
fDate :
7/4/1996 12:00:00 AM
Firstpage :
1287
Lastpage :
1288
Abstract :
Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.89As four quantum wells for 780 nm wavelength emission are fabricated using aluminum oxide apertures. The fabrication process requires only single step mask alignment. The 3.4 μm square laser exhibits a low threshold current of 200 μA, which is more than an order of magnitude smaller than the previous values obtained at 780 nm. Singlemode peak output power is 1.1 mW. This 3.4 μm laser is found to operate in the fundamental transverse mode over the complete operating current range. The 7.6 μm square laser shows peak output power of 2.7 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 1.1 mW; 2.7 mW; 200 muA; 3.4 micron; 7.6 micron; 780 nm; Al0.11Ga0.89As; Al0.11Ga0.89As quantum wells; aluminum oxide apertures; fabrication; fundamental transverse mode; oxidised vertical-cavity surface-emitting lasers; single mode peak output power; single step mask alignment; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960833
Filename :
503628
Link To Document :
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