Title :
Astigmatism of semiconductor lasers with cosh¿2 (x) profile of gain
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Abstract :
The distance of the virtual source of the laser output beam from the mirror is calculated by treating the radiation far field for which an analytical representation is given. The results show that for typical narrow-stripe gain-guided lasers the astigmatism is much stronger than would be obtained with a cylindrical phase-front approximation.
Keywords :
aberrations; semiconductor junction lasers; astigmatism; cosh-2(x) gain profile; laser output beam; mirror; narrow-stripe gain-guided lasers; radiation far field; semiconductor lasers; virtual source;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820696
