DocumentCode :
982087
Title :
Uniaxially strained ZnO/SiO2/Si SAW resonators
Author :
Martin, S.J. ; Gunshor, R.L. ; Pierret, R.F. ; Gorodetsky, G.
Author_Institution :
Purdue University, School of Electrical Engineering, West Lafayette, USA
Volume :
18
Issue :
24
fYear :
1982
Firstpage :
1030
Lastpage :
1031
Abstract :
Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO2/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.
Keywords :
crystal resonators; silicon compounds; surface acoustic wave devices; zinc compounds; ZnO/SiO2/Si SAW resonators; cantilever mounting; phase velocity; substrate; uniaxial biasing strains;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820705
Filename :
4247060
Link To Document :
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