DocumentCode
982087
Title
Uniaxially strained ZnO/SiO2/Si SAW resonators
Author
Martin, S.J. ; Gunshor, R.L. ; Pierret, R.F. ; Gorodetsky, G.
Author_Institution
Purdue University, School of Electrical Engineering, West Lafayette, USA
Volume
18
Issue
24
fYear
1982
Firstpage
1030
Lastpage
1031
Abstract
Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO2/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.
Keywords
crystal resonators; silicon compounds; surface acoustic wave devices; zinc compounds; ZnO/SiO2/Si SAW resonators; cantilever mounting; phase velocity; substrate; uniaxial biasing strains;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820705
Filename
4247060
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