DocumentCode
982111
Title
Structural dependence of 1.3 μm narrow beam lasers fabricated by selective MOCVD
Author
Kasukawa, A. ; Yamanaka, N. ; Iwai, N. ; Nakahira, Yoshihiro ; Yokouchi, N.
Author_Institution
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama
Volume
32
Issue
14
fYear
1996
fDate
7/4/1996 12:00:00 AM
Firstpage
1304
Lastpage
1305
Abstract
Lasing characteristics of 1.3 μm narrow beam lasers have been investigated in terms of the energy separation between gain and waveguide regions simultaneously formed by selective MOCVD. The HR-coated lasers with a large energy separation of 110 meV exhibit a low threshold current of 12 mA, a high power of >50 mW, and a high temperature of 120°C with narrow beam divergence of 11° (horizontal) and 11° (vertical)
Keywords
chemical vapour deposition; quantum well lasers; semiconductor growth; 1.3 mum; 12 mA; 120 degC; HR-coated lasers; energy separation; gain region; lasing characteristics; narrow beam divergence; narrow beam lasers; quantum well lasers; selective MOCVD; threshold current; waveguide region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960847
Filename
503639
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