Title :
InGaAs enhancement-mode MISFETs using double-layer gate insulator
Author :
Ishii, Kazuki ; Sawada, Tsuyoshi ; Ohno, Hideo ; Hasegawa, Hiroshi
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
In this letter we describe the fabrication of enhancement-mode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 ¿m gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 1013 cm¿2 eV¿1 at Ec ¿0.057 eV and the minimum of 8 × 1011 cm¿2 eV¿1 near midgap are measured from C/V characteristics.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; interface electron states; liquid phase epitaxial growth; III-V semiconductor; InGaAs enhancement-mode MISFET; anodic Al2O3/anodic native oxide double layer; double-layer gate insulator; effective channel mobility; fabrication; interface state density distribution; liquid-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820708
