Title :
Enhancement of resist plasma erosion rates by electron-beam hardening
Author :
Morgan, R.A. ; Pollard, C.J.
Author_Institution :
British Telecom Research Laboratories, Microelectronics Division, Ipswich, UK
Abstract :
A nonthermal method of hardening positive photoresists by means of a scanned high-energy electron beam in preference to direct resist heating is described. It has been established that moderate electron doses produce significant resist cross-linking without flow. Plasma etch resistance can be enhanced in the resists with no degradation of the as-developed line profile.
Keywords :
electron beam applications; integrated circuit technology; photoresists; sputter etching; direct resist heating; electron-beam hardening; integrated circuit technology; nonthermal method; positive photoresists; resist plasma erosion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820710
