• DocumentCode
    982227
  • Title

    Switching behaviour of Al2O3-n GaAs MISFETs

  • Author

    Lee, Woo Seung ; Swanson, J.G.

  • Author_Institution
    Chelsea College, Department of Electronics, London, UK
  • Volume
    18
  • Issue
    24
  • fYear
    1982
  • Firstpage
    1049
  • Lastpage
    1051
  • Abstract
    The switching behaviour of plasma alumina-n GaAs IGFETs is described in quasi normally-off and deep depletion modes. The observations of recovery from the off-state suggest that in each case this is controlled by the thermal generation of minority carriers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; minority carriers; Al2O3-n GaAs MISFETs; III-V semiconductor; deep depletion modes; minority carriers; quasi normally-off mode; switching behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820717
  • Filename
    4247074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982227