Title :
Switching behaviour of Al2O3-n GaAs MISFETs
Author :
Lee, Woo Seung ; Swanson, J.G.
Author_Institution :
Chelsea College, Department of Electronics, London, UK
Abstract :
The switching behaviour of plasma alumina-n GaAs IGFETs is described in quasi normally-off and deep depletion modes. The observations of recovery from the off-state suggest that in each case this is controlled by the thermal generation of minority carriers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; minority carriers; Al2O3-n GaAs MISFETs; III-V semiconductor; deep depletion modes; minority carriers; quasi normally-off mode; switching behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820717
