(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates

Author

Bona, Gian-Luca ; Unger, Peter ; Buchan, Nicholas I. ; Heuberger, Wilhelm ; Jakubowicz, Abram ; Roentgen, Peter

Author_Institution

IBM Res. Div., Ruschlikon, Switzerland

Volume

5

Issue

10

fYear

1993

Firstpage

1125

Lastpage

1128

Abstract

The authors present an AlGaInP/GaInP strained QW laser with AlGaAs cladding layers grown over nonplanar substrates. Excellent device quality and performance is obtained on substrates patterned with ridges prior to epitaxial growth. The lateral current and carrier confinement achieved by exploiting the disordering of the neutral superlattice at ridge sidewalls with shallow angles results in a threshold current density for 5- mu m-wide stripes that is one-half that of conventional devices. The potential of this device for high electrical-to-optical conversion makes it well suited for applications to dense addressable laser arrays.<>

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor growth; semiconductor laser arrays; semiconductor lasers; vapour phase epitaxial growth; 5 micron; AlGaAs; AlGaAs cladding layers; AlGaInP-GaInP; AlGaInP/GaInP strained QW laser; LP-MOVPE; carrier confinement; dense addressable laser arrays; device quality; disordering; epitaxial growth; high electrical-to-optical conversion; lateral confinement; lateral current; neutral superlattice; nonplanar substrates; performance; ridge sidewalls; ridges; shallow angles; threshold current density; Diode lasers; Epitaxial growth; Fiber lasers; Fiber nonlinear optics; Frequency; Laser theory; Optical harmonic generation; Optical sensors; Optical superlattices; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248402

Filename

248402