Title :
(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates
Author :
Bona, Gian-Luca ; Unger, Peter ; Buchan, Nicholas I. ; Heuberger, Wilhelm ; Jakubowicz, Abram ; Roentgen, Peter
Author_Institution :
IBM Res. Div., Ruschlikon, Switzerland
Abstract :
The authors present an AlGaInP/GaInP strained QW laser with AlGaAs cladding layers grown over nonplanar substrates. Excellent device quality and performance is obtained on substrates patterned with ridges prior to epitaxial growth. The lateral current and carrier confinement achieved by exploiting the disordering of the neutral superlattice at ridge sidewalls with shallow angles results in a threshold current density for 5- mu m-wide stripes that is one-half that of conventional devices. The potential of this device for high electrical-to-optical conversion makes it well suited for applications to dense addressable laser arrays.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor growth; semiconductor laser arrays; semiconductor lasers; vapour phase epitaxial growth; 5 micron; AlGaAs; AlGaAs cladding layers; AlGaInP-GaInP; AlGaInP/GaInP strained QW laser; LP-MOVPE; carrier confinement; dense addressable laser arrays; device quality; disordering; epitaxial growth; high electrical-to-optical conversion; lateral confinement; lateral current; neutral superlattice; nonplanar substrates; performance; ridge sidewalls; ridges; shallow angles; threshold current density; Diode lasers; Epitaxial growth; Fiber lasers; Fiber nonlinear optics; Frequency; Laser theory; Optical harmonic generation; Optical sensors; Optical superlattices; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
