Modeling and design of GaAs traveling-wave electrooptic modulators based on the planar microstrip structure

Author

Cui, Yansong ; Berini, Pierre

Author_Institution

Sch. of Inf. Technol. & Eng., Univ. of Ottawa, Ont., Canada

Volume

24

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

2368

Lastpage

2379

Abstract

GaAs traveling-wave electrooptic modulators based on the planar microstrip structure (PMS) have been thoroughly characterized theoretically and a near-optimal design is proposed. The optical, microwave, and modulator performance are investigated in detail. The structure is simple to fabricate and so should provide cost advantages. An electrical 3-dB bandwidth of about 15 GHz (optical 3-dB bandwidth of about 40 GHz) is obtained for our best design.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; integrated optics; integrated optoelectronics; microstrip components; microwave photonics; 15 GHz; 40 GHz; GaAs; GaAs travelling-wave modulators; electrooptic modulators; microwave modulator; near-optimal modulator design; optical modulator; planar microstrip structure; Bandwidth; Electrodes; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Microstrip; Microwave devices; Optical losses; Optical modulation; Optical polymers; Electrooptic (EO); GaAs; modulator; planar microstrip structure (PMS); slow-wave electrode; traveling wave; velocity matched;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2006.874599

Filename

1643795