• DocumentCode
    982374
  • Title

    Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode

  • Author

    Tomizawa, Keiichi ; Awano, Yuji ; Hashizume, Nobuya ; Suzuki, F.

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    18
  • Issue
    25
  • fYear
    1982
  • Firstpage
    1067
  • Lastpage
    1069
  • Abstract
    A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1¿xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.
  • Keywords
    III-V semiconductors; Monte Carlo methods; electron mobility; gallium arsenide; p-n heterojunctions; semiconductor diodes; GaAlAs heterojunction cathode; GaAs submicron n+-n-n+ diode; III-V semiconductor; Monte Carlo simulation; hot electron injection; mean electron velocity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820731
  • Filename
    4247094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982374