CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors

Author

Donnelly, J.P. ; Goodhue, W.D. ; Wang, C.A. ; Bailey, R.J. ; Lincoln, G.A. ; Johnson, G.D. ; Missaggia, L.J. ; Walpole, J.N.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

5

Issue

10

fYear

1993

Firstpage

1146

Lastpage

1149

Abstract

A monolithic two-dimensional array of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors was mounted junction-side up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Both the facets and parabolic deflecting mirrors were etched using chlorine ion-beam-assisted etching. Threshold current densities of different sections of the array were consistently around 240 A/cm/sup 2/, and measured CW differential quantum efficiencies were in the 46-48% range. CW power densities as high as 148 W/cm/sup 2/ were achieved with an average temperature rise of less than 25 degrees C in this junction-side-up configuration.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser accessories; mirrors; semiconductor laser arrays; 2D laser diode arrays; 46 to 48 percent; AlGaAs; AlGaAs diode lasers; CW differential quantum efficiencies; CW operation; CW power densities; W-Cu; W/Cu microchannel heatsink; average temperature rise; dry-etched vertical facets; ion-beam-assisted etching; junction-side up; monolithic arrays; parabolic deflecting mirrors; surface-emitting; threshold current densities; two-dimensional array; Current measurement; Density measurement; Diode lasers; Etching; Microchannel; Mirrors; Optical arrays; Semiconductor laser arrays; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248409

Filename

248409