Title :
1/f noise behavior in semiconductor laser degradation
Author :
Fukuda, Mitsuo ; Hirono, Takuo ; Kurosaki, Takeshi ; Kano, Fumiyoshi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
It is experimentally demonstrated that the increase in residual spectral linewidth during device degradation is due to an increase in 1/f noise in a multiple quantum-well (MQW) distributed-feedback (DFB) laser. The origin of 1/f noise and its influence on device characteristics is discussed and clarified by observing the degradation behavior of the spectral linewidth.<>
Keywords :
distributed feedback lasers; random noise; semiconductor device noise; semiconductor lasers; spectral line breadth; 1/f noise behavior; MQW distributed-feedback DFB laser; device characteristics; device degradation; distributed-feedback; multiple quantum-well; residual spectral linewidth; semiconductor laser degradation; spectral linewidth; Degradation; Epitaxial growth; Laser modes; Laser noise; Monitoring; Optical noise; Quantum well devices; Radiative recombination; Semiconductor device noise; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
