Title :
Evidence of detrimental surface effects on GaAs power MESFETs
Author :
Dumas, J.M. ; Paugam, J. ; Le Mouellic, C.
Author_Institution :
CNET, LAB/ICM, Lannion, France
Abstract :
GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; life testing; power transistors; GaAs power MESFETs; III-V semiconductor; biased life tests; detrimental surface effects; gate leakage current; gate-to-drain break-down voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820747
