• DocumentCode
    982529
  • Title

    Evidence of detrimental surface effects on GaAs power MESFETs

  • Author

    Dumas, J.M. ; Paugam, J. ; Le Mouellic, C.

  • Author_Institution
    CNET, LAB/ICM, Lannion, France
  • Volume
    18
  • Issue
    25
  • fYear
    1982
  • Firstpage
    1094
  • Lastpage
    1095
  • Abstract
    GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; life testing; power transistors; GaAs power MESFETs; III-V semiconductor; biased life tests; detrimental surface effects; gate leakage current; gate-to-drain break-down voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820747
  • Filename
    4247115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982529