• DocumentCode
    982578
  • Title

    MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz

  • Author

    Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Balmer, R.S. ; Martin, T. ; Neuburger, M. ; Schumacher, H.

  • Author_Institution
    Res. & Technol., DaimlerChrysler AG, Ulm, Germany
  • Volume
    40
  • Issue
    9
  • fYear
    2004
  • fDate
    4/29/2004 12:00:00 AM
  • Firstpage
    564
  • Lastpage
    566
  • Abstract
    A monolithic microwave integrated circuit power amplifier consisting of one 8×100 μm AlGaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuous-wave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point VDS=40 V. Reducing the bias to VDS=25 V results in 34.2 dBm maximum CW output power with 32% PAE at 10 GHz.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; 10 GHz; AlGaN-GaN; HEMT; MMIC power amplifier; continuous wave output power; coplanar amplifier; maximum power added efficiency; monolithic microwave integrated circuit; power density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040378
  • Filename
    1296995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982578