Title :
MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz
Author :
Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Balmer, R.S. ; Martin, T. ; Neuburger, M. ; Schumacher, H.
Author_Institution :
Res. & Technol., DaimlerChrysler AG, Ulm, Germany
fDate :
4/29/2004 12:00:00 AM
Abstract :
A monolithic microwave integrated circuit power amplifier consisting of one 8×100 μm AlGaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuous-wave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point VDS=40 V. Reducing the bias to VDS=25 V results in 34.2 dBm maximum CW output power with 32% PAE at 10 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; 10 GHz; AlGaN-GaN; HEMT; MMIC power amplifier; continuous wave output power; coplanar amplifier; maximum power added efficiency; monolithic microwave integrated circuit; power density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040378
