Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation

Author

Hargis, M.C. ; Carnahan, R.E. ; Brown, J.S. ; Jokerst, N.M.

Author_Institution

Sch. of Electr. Eng. & Microelectron., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

5

Issue

10

fYear

1993

Firstpage

1210

Lastpage

1212

Abstract

High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200- mu m-diameter device published to date.<>

Keywords

III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical waveguides; passivation; photodetectors; semiconductor growth; 200 mum; 5 V; 5 nA; GaAs-AlGaAs; GaAs/AlGaAs metal-semiconductor-metal photodetectors; back passivation; dark current; epitaxial lift-off; frequency response; growth substrate; independently optimized integrated circuits; integrated optics; on-wafer devices; optical waveguides; performance degradation; responsivity; thin-film; unpassivated devices; Bonding; Dark current; Detectors; Frequency response; Gallium arsenide; Passivation; Photodetectors; Substrates; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248430

Filename

248430