• DocumentCode
    982657
  • Title

    High-performance single-mode AlGaAs Gaussian channel substrate planar laser diodes

  • Author

    Ceruzzi, A.D.

  • Author_Institution
    M/A-COM Laser Diode, Inc., New Brunswick, USA
  • Volume
    19
  • Issue
    1
  • fYear
    1983
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Stable fundamental transverse and single longitudinal mode CW behaviour is demonstrated using a Gaussian channel substrate planar waveguide laser. Highly reliable performance including low threshold current, extremely low spontaneous background level and high-power CW operation has been achieved. In addition, the longitudinal mode has a locking range of 7.8°C, where the wavelength changes at a rate of 0.6 Å/°C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; Gaussian channel substrate planar waveguide laser; high-power CW operation; locking range; low threshold current; single longitudinal mode CW behaviour; spontaneous background level; stable fundamental transverse mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830002
  • Filename
    4247133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982657