Title :
Anodic oxidation of a-Si:H films
Author :
Yamamoto, Hiroshi ; Arimoto, S. ; Hasegawa, Hiroshi ; Ohno, Hideo ; Nanjo, J.
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
It is shown that thick native oxide layers (up to 2500 Ã…) can be grown on a-Si:H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1.46. The voltage growth rate is found to be 5.3 Ã…/V.
Keywords :
amorphous semiconductors; elemental semiconductors; ellipsometry; hydrogen; oxidation; semiconductor thin films; silicon; amorphous Si:H films; anodic oxidation; ellipsometry; refractive index; room temperature; thick native oxide layers; voltage growth rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830005
