PMOS transistors fabricated in large-area laser-crystallised Si on silica

PMOS transistors have been fabricated in device-worthy Si which was achieved by large-area laser-crystallisation of Si on silica. The crystallised Si contains few large-angle grain boundaries due to laser-beam inhomogeneity but exhibits subgrain boundaries aligned along the laser track. Cracking of the Si, a result of the mismatch of the thermal expansion coefficients of Si and silica, has been substantially reduced by removing only a stripped region of the SiO2 encapsulation layer for transistor fabrication. A high yield and good electrical characteristics of the devices were obtained.