Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si:H p-i-n photodiode

Author

Wagner, Christoph ; Frankenberger, J. ; Deimel, Peter P.

Author_Institution

DASA, Munchen, Germany

Volume

5

Issue

10

fYear

1993

Firstpage

1257

Lastpage

1259

Abstract

We have fabricated an optical pressure sensor consisting of a Mach-Zehnder (MZ) interferometer and a thin membrane anisotropically etched into the silicon substrate underneath the measuring arm of the interferometer. The oxynitride rib-waveguides are single mode both for the TE and the TM polarization. To measure the constructive and destructive interferences at the output section of the interferometer we have integrated the rib waveguide with a lateral a-Si:H p-i-n photodiode. The number of constructive interferences measured for a given membrane deflection differs depending on TE or TM polarization.<>

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; integrated optics; integrated optoelectronics; light interferometers; optical sensors; p-i-n photodiodes; photodetectors; pressure sensors; silicon; Mach-Zehnder interferometer; Si; Si:H; TE polarization; TM polarization; anisotropic etching; lateral a-Si:H p-i-n photodiode; membrane deflection; optical pressure sensor; oxynitride rib-waveguides; rib waveguide integration; silicon substrate; single mode; thin membrane; Anisotropic magnetoresistance; Biomembranes; Etching; Geometrical optics; Interference; Optical interferometry; Optical sensors; Pressure measurement; Silicon; Tellurium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248446

Filename

248446