A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Author

Yang, Jie ; He, Jin ; Liu, Feng ; Zhang, Lining ; Liu, Feilong ; Zhang, Xing ; Chan, Mansun

Author_Institution

Sch. of Electron. & Comput. Sci., Peking Univ., Beijing

Volume

55

Issue

11

fYear

2008

Firstpage

2898

Lastpage

2906

Abstract

A silicon-based nanowire FET (SNWT) compact model is developed for circuit simulation. Starting from the solution of poisson´s equation, an accurate inversion charge expression is derived for SNWTs with arbitrary body doping concentration. The drain current, transconductance, output conductance, terminal charges, and capacitances are then calculated based on fundamental device physics. Short-channel and quantum effects have been included in the model in a self-consistent way. Comparison between the numerical simulation and analytical calculation shows that the proposed model is valid for all operation regions of SNWTs with different dimensions and channel doping. The model has been implemented in circuit simulators by Verilog-A, and its application in circuit simulation is also demonstrated.

Keywords

MOSFET; Poisson equation; doping; network synthesis; MOSFET; Poisson equation; Verilog-A; arbitrary body doping concentration; capacitances; channel doping; circuit Design; circuit simulation; drain current; output conductance; quantum effects; short-channel; silicon-based nanowire FET; terminal charges; transconductance; Circuit simulation; Doping; FETs; MOSFETs; Numerical simulation; Physics; Poisson equations; Quantum capacitance; Semiconductor process modeling; Transconductance; Circuit simulation; Verilog-A; compact model; device physics; silicon nanowire MOSFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2005184

Filename

4668570