• DocumentCode
    982895
  • Title

    Deformation-free overgrowth of InGaAsP DFB corrugations

  • Author

    Nelson, A.W. ; Westbrook, L.D. ; Evans, Jamie S.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    34
  • Lastpage
    36
  • Abstract
    A hybrid LPE/MOCVD growth procedure is described which enables ¿ = 1.55 ¿m distributed feedback laser structures to be fabricated without deformation of the corrugated region of the device. Depths of corrugations remaining after overgrowth using this process are typically 1600 Å. Conditions under which deformation does occur are also presented.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; vapour phase epitaxial growth; III-V semiconductors; InGaAsP distributed feedback lasers; deformation-free overgrowth; hybrid LPE/MOCVD growth procedure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830026
  • Filename
    4247174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982895