• DocumentCode
    982903
  • Title

    Substrate bias effect for C-MOS operational amplifier using SIMOX technology

  • Author

    Akiya, M. ; Kimura, T.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    The substrate bias effect for SIMOX devices is described. By setting the substrate bias voltage to the accumulation mode in the bulk, the kink onset voltage for the N-ch MOSFET has been found to increase. Open-loop voltage gain for a C-MOS two-stage operational amplifier has been enhanced up to 65 dB.
  • Keywords
    field effect integrated circuits; integrated circuit technology; operational amplifiers; C-MOS operational amplifier; MOSFET; SIMOX technology; accumulation mode; integrated circuit technology; kink onset voltage; open loop voltage; substrate bias effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830027
  • Filename
    4247176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982903