• DocumentCode
    982922
  • Title

    S-parameter model of dual-gate GaAs MESFET

  • Author

    Ashoka, H. ; Tucker, R.S.

  • Author_Institution
    University of Queensland, Department of Electrical Engineering, Brisbane, Australia
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    A simple modelling procedure for the dual-gate MESFET is presented. The model is based on a cascoded connection of two single-gate devices, with each device represented in terms of its s-parameters. These s-parameters are obtained from the overall dual-gate MESFET s-parameters, using accurate deembedding techniques.
  • Keywords
    III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; III-V semiconductor; S-parameter model; accurate deembedding techniques; dual-gate GaAs MESFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830029
  • Filename
    4247182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982922