Germanium Antimonide Phase-Change Nanowires for Memory Applications

Author

Sun, Xuhui ; Yu, Bin ; Ng, Garrick ; Meyyappan, M. ; Ju, Sanghyun ; Janes, David B.

Author_Institution

NASA Ames Res. Center, Moffett Field, CA

Volume

55

Issue

11

fYear

2008

Firstpage

3131

Lastpage

3135

Abstract

GeSb nanowires (NWs) have been grown using a vapor-liquid-solid approach for the fabrication of electrically operated phase-change random access memory device. The NWs are 40-100 nm in diameter and have approximately 90% Sb for fast crystallization. Memory devices show an on/off resistance ratio of 10⁴, reset programming current of 0.7 mA, and set programming current of 60 nA.

Keywords

amorphous semiconductors; germanium compounds; nanowires; phase change materials; random-access storage; semiconductor quantum wires; semiconductor storage; GeSb; PRAM; crystallization; germanium antimonide phase-change nanowire; on-off resistance ratio; phase-change random access memory device; set programming current; vapor-liquid-solid growth method; Crystalline materials; Crystallization; Germanium; Nanowires; Optical films; Phase change materials; Phase change memory; Phase change random access memory; Temperature; Transistors; Chalcogenide; Flash memory; nanowire; phase change material (PCM); phase change memory; random access memory (RAM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2005160

Filename

4668584