• DocumentCode
    982941
  • Title

    Study of deep level in bulk P-InP by admittance spectroscopy

  • Author

    Kuo, J.M. ; Thiel, F.A.

  • Author_Institution
    North Carolina State University, Department of Electrical Engineering, Raleigh, USA
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    41
  • Lastpage
    43
  • Abstract
    We report the application of diode admittance spectroscopy in characterising traps in Mg-doped InP. Measurements performed on Au-InP Schottky diodes have identified a hole trap located 0.15 eV above the valence band of InP. Other characteristic parameters such as trap density and hole capture cross-section have also been determined, with results suggesting hole capture at a neutral trapping centre.
  • Keywords
    III-V semiconductors; deep levels; hole traps; indium compounds; Au-InP Schottky diodes; III-V semiconductors; InP:Mg; bulk P-InP; deep level; diode admittance spectroscopy; hole capture cross-section; hole trap; trap density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830031
  • Filename
    4247186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982941