• DocumentCode
    982949
  • Title

    Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors

  • Author

    Stern, Eric ; Vacic, Aleksandar ; Reed, Mark A.

  • Author_Institution
    Dept. of Biomed. Eng., Yale Univ., New Haven, CT
  • Volume
    55
  • Issue
    11
  • fYear
    2008
  • Firstpage
    3119
  • Lastpage
    3130
  • Abstract
    Recent studies have demonstrated the ability of semiconducting nanowire (NW) field-effect transistors (FETs) to serve as highly sensitive label-free sensors for biochemicals, including small molecules, proteins, and nucleic acids. The nanoscale confinement of the channel current in concert with the large-surface area-to-volume ratio enables charged molecules bound to the surface to effectively gate the device. Functionalization of the NW surface with specific receptors therefore enables direct electronic detection of particular molecules of interest. The original work in the field relied on NWs grown by the chemical vapor deposition method, which require hybrid bottom-up fabrication processes for device realization. The lack of reproducibility with these techniques and the associated inability to leverage the central advantage of complementary MOSFETs, namely, very large scale integration, have recently led a number of groups to create NW sensors using only traditional top-down fabrication techniques. In this paper, we focus primarily on these most recent studies and discuss necessary future studies as dictated by experimental and theoretical considerations.
  • Keywords
    MOSFET; VLSI; biomolecular electronics; biosensors; chemical vapour deposition; nanowires; MOSFET; biochemicals; biomolecular sensors; chemical vapor deposition method; electronic detection; hybrid bottom-up fabrication processes; semiconducting nanowire field-effect transistor; very large scale integration; Biosensors; Chemical vapor deposition; FETs; Fabrication; MOSFETs; Nanoscale devices; Proteins; Reproducibility of results; Semiconductivity; Very large scale integration; Biosensing; chemFET; field-effect transistor (FET); ion-sensitive FET (ISFET); label-free; nanosensing; nanotube; nanowire (NW); sensing; ultrasensitive; unlabeled;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2005168
  • Filename
    4668585