• DocumentCode
    982973
  • Title

    Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

  • Author

    Banno, Naoki ; Sakamoto, Toshitsugu ; Iguchi, Noriyuki ; Sunamura, Hiroshi ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu

  • Author_Institution
    Device Platforms Res. Labs., NEC Corp., Sagamihara
  • Volume
    55
  • Issue
    11
  • fYear
    2008
  • Firstpage
    3283
  • Lastpage
    3287
  • Abstract
    A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (V ON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that V ON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and V ON, we replaced the former electrolyte, Cu2-alphaS, with Ta2O5, which enabled us to appropriately adjust V ON with a smaller Cu+ ion diffusion coefficient.
  • Keywords
    bridge circuits; copper; copper compounds; diffusion; dissolving; electrochemical devices; ion mobility; nanotechnology; programmable circuits; solid electrolytes; switches; tantalum compounds; Cu; Cu2-alphaS; Ta2O5; conductance state; copper ion diffusivity; dissolving; electrochemical reaction; ion migration; nanometer-scale switch; programmable large-scale-integration circuits; solid-electrolyte nonvolatile switch; turn-on voltage; Bridge circuits; Electrodes; Field programmable gate arrays; Laboratories; Large scale integration; National electric code; Solids; Switches; Switching circuits; Voltage; Electrochemical devices; ions; programmable logic device; switches;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2004246
  • Filename
    4668587