• DocumentCode
    983089
  • Title

    Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics

  • Author

    Kamins, Theodore I.

  • Author_Institution
    Inf. & Quantum Syst. Lab., Palo Alto, CA
  • Volume
    55
  • Issue
    11
  • fYear
    2008
  • Firstpage
    3096
  • Lastpage
    3106
  • Abstract
    In this paper, we discuss methods of positioning nanowires at desired locations on a substrate to explore which techniques are most suitable for different potential applications, with an emphasis on Si nanowires. We focus most attention on growing the nanowires at the position where they will be used. We discuss forming one connection during growth for mechanically resonant sensors and making two connections during growth for field-effect sensors. Next, we discuss in less detail repositioning nanowires from a growth substrate onto a final substrate, with focus on potential applications in large-area electronics, such as displays, or electronics on a low-temperature substrate. Finally, we briefly consider possible catalyst materials and explore potential concerns with the widely used Au catalyst.
  • Keywords
    elemental semiconductors; field effect devices; gold; monolithic integrated circuits; nanowires; self-assembly; sensors; silicon; Au; Si; catalyst materials; displays; field-effect sensors; large-area electronics; mechanically resonant sensors; nanostructured growth; self-assembled metal-catalyzed semiconductor nanowires; sensors; Displays; Gold; Heterojunctions; Integrated circuit interconnections; Logic devices; Nanowires; Resonance; Self-assembly; Semiconductor materials; Substrates; Nanotechnology; semiconductor devices; semiconductor materials; sensors; transducers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2005177
  • Filename
    4668598