DocumentCode
983089
Title
Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics
Author
Kamins, Theodore I.
Author_Institution
Inf. & Quantum Syst. Lab., Palo Alto, CA
Volume
55
Issue
11
fYear
2008
Firstpage
3096
Lastpage
3106
Abstract
In this paper, we discuss methods of positioning nanowires at desired locations on a substrate to explore which techniques are most suitable for different potential applications, with an emphasis on Si nanowires. We focus most attention on growing the nanowires at the position where they will be used. We discuss forming one connection during growth for mechanically resonant sensors and making two connections during growth for field-effect sensors. Next, we discuss in less detail repositioning nanowires from a growth substrate onto a final substrate, with focus on potential applications in large-area electronics, such as displays, or electronics on a low-temperature substrate. Finally, we briefly consider possible catalyst materials and explore potential concerns with the widely used Au catalyst.
Keywords
elemental semiconductors; field effect devices; gold; monolithic integrated circuits; nanowires; self-assembly; sensors; silicon; Au; Si; catalyst materials; displays; field-effect sensors; large-area electronics; mechanically resonant sensors; nanostructured growth; self-assembled metal-catalyzed semiconductor nanowires; sensors; Displays; Gold; Heterojunctions; Integrated circuit interconnections; Logic devices; Nanowires; Resonance; Self-assembly; Semiconductor materials; Substrates; Nanotechnology; semiconductor devices; semiconductor materials; sensors; transducers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2005177
Filename
4668598
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