Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors

Author

Hong, Woong-Ki ; Jo, Gunho ; Kwon, Soon-Shin ; Song, Sunghoon ; Lee, Takhee

Author_Institution

Dept. of Mater. & Sci. Eng., Gwangju Inst. of Sci. & Technol., Gwangju

Volume

55

Issue

11

fYear

2008

Firstpage

3020

Lastpage

3029

Abstract

A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is presented. The FETs made from surface-tailored ZnO nanowire exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We demonstrate that the transport properties of ZnO nanowire FETs are associated with the influence of nanowire size and surface roughness associated with the presence of surface trap states at the interfaces as well as the surface chemistry in environments.

Keywords

II-VI semiconductors; carrier mobility; electron traps; field effect transistors; nanoelectronics; nanowires; semiconductor quantum wires; surface chemistry; surface roughness; wide band gap semiconductors; zinc compounds; ZnO; depletion modes; electronic transport properties; enhancement modes; surface chemistry; surface roughness; surface trap states; surface-tailored nanowire field-effect transistors; tunable electrical properties; Chemistry; FETs; Gold; Nanoscale devices; Passivation; Rough surfaces; Substrates; Surface morphology; Surface roughness; Zinc oxide; Field-effect transistor (FET); ZnO nanowire; passivation; surface roughness;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2005156

Filename

4668599