• DocumentCode
    983103
  • Title

    Wave-theoretical analysis of signal propagation on FET electrodes

  • Author

    Heinrich, Wolfgang ; Hartnagel, H.L.

  • Author_Institution
    Technische Hochschule Darmstadt, Institut fÿr Hochfrequenztechnik, Darmstadt, West Germany
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    65
  • Lastpage
    67
  • Abstract
    A wave-theoretical analysis of MESFET electrode structures is undertaken, incorporating losses of both the semiconducting layer and the finite conductivity of the electrodes. It is shown that the relevant microwave FET mode has slow-wave properties with a slowing factor of about 6.
  • Keywords
    Schottky gate field effect transistors; power transistors; semiconductor device models; MESFET electrode structures; microwave power transistors; semiconductor device models; wave-theoretical analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830048
  • Filename
    4247216