• DocumentCode
    983209
  • Title

    Short-cavity single-frequency InGaAsP buried-heterostructure lasers

  • Author

    Lee, T.P. ; Burrus, C.A. ; Linke ; Nelson, R.J.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • Firstpage
    82
  • Lastpage
    84
  • Abstract
    Short-cavity (50¿100 ¿m) index-guided lasers made by recleaving conventional 1.3 ¿m BH devices have been found to provide improved single-frequency output under both CW and modulated conditions.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 50 to 100 micron; III-V semiconductors; index-guided lasers; short cavity lasers; single-frequency InGaAsP buried-heterostructure lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830059
  • Filename
    4247238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=983209