Title :
Control of the height of Schottky barriers on MBE GaAs
Author :
Woodcock, J.M. ; Harris, J.J.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
The effective Schottky barrier height of nickel on gallium arsenide has been varied between 0.48 eV and 0.96 eV by using MBE to grow a range of thin heavily doped layers. Barrier lowering has been achieved with n-type layers doped with silicon or tin and barrier raising with p-type layers doped with beryllium. The ideality factor of the diodes was less than 1.2 in all cases.
Keywords :
III-V semiconductors; Schottky effect; gallium arsenide; molecular beam epitaxial growth; Be; III-V semiconductor; MBE GaAs; Ni; Schottky barrier height; Si; Sn; ideality factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830067
