• DocumentCode
    983272
  • Title

    Control of the height of Schottky barriers on MBE GaAs

  • Author

    Woodcock, J.M. ; Harris, J.J.

  • Author_Institution
    Philips Research Laboratories, Redhill, UK
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • Firstpage
    93
  • Lastpage
    95
  • Abstract
    The effective Schottky barrier height of nickel on gallium arsenide has been varied between 0.48 eV and 0.96 eV by using MBE to grow a range of thin heavily doped layers. Barrier lowering has been achieved with n-type layers doped with silicon or tin and barrier raising with p-type layers doped with beryllium. The ideality factor of the diodes was less than 1.2 in all cases.
  • Keywords
    III-V semiconductors; Schottky effect; gallium arsenide; molecular beam epitaxial growth; Be; III-V semiconductor; MBE GaAs; Ni; Schottky barrier height; Si; Sn; ideality factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830067
  • Filename
    4247255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=983272