80-Gb/s Low-Driving-Voltage InP DQPSK Modulator With an n-p-i-n Structure

Author

Kikuchi, Nobuhiro ; Shibata, Yasuo ; Tsuzuki, Ken ; Sanjoh, Hiroaki ; Sato, Tomonari ; Yamada, Eiichi ; Ishibashi, Tadao ; Yasaka, Hiroshi

Author_Institution

Photonics Labs., NTT Corp., Kanagawa

Volume

21

Issue

12

fYear

2009

fDate

6/15/2009 12:00:00 AM

Firstpage

787

Lastpage

789

Abstract

We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 V_pp in a push-pull configuration. The chip size is just 7.5 mm times 1.3 mm.

Keywords

III-V semiconductors; differential phase shift keying; indium compounds; optical losses; optical modulation; optical waveguides; quadrature phase shift keying; InP; bit rate 80 Gbit/s; differential quadrature phase-shift keying modulator; electrical propagation loss; insertion loss; low-driving-voltage DQPSK modulator; n-p-i-n waveguide structure; optical propagation loss; push-pull configuration; size 1.3 mm; size 7.5 mm; traveling-wave-electrode; Bit rate; Indium phosphide; Insertion loss; Low voltage; Optical losses; Optical propagation; Optical waveguides; Phase modulation; Phase shift keying; Propagation losses; Optical modulation; quadrature phase-shift keying; semiconductor waveguides; traveling wave devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2018475

Filename

5037677